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P499 – 6″ HV E-beam deposition IPHT
Application
HV e-beam deposition module (prepared for cluster integration) for thin film and multilayer deposition at 6″ substrates
Year of delivery
2022
Installation site
Leibnitz IPHT, Jena, Germany
Design Features
- HV E-Beam deposition system in combination with ion beam sample treatment.
- One multi pocket e-beam source.
- Motorized pocket exchange for automatic deposition processes.
- Pneumatic source shutter to avoid deposition during material heat up time.
- Thickness controller incl. rate regulation and end point detection.
- Sample manipulator with two motorized axes (stage tilt and sample clamping) and sample cooling.
- Ion source for sample precleaning, mild etching and plasma treatment.
Special Features
- System is prepared to be added to a cluster tool via SEMI standard transfer port.
- Different sample sizes from 6″ wafer down to 3″ wafer can be handled (using different kind of sample adapters).
Outer Dimensions
Technical specifications and performance values
General
Deposition chamber
Size
About 500 mm width, about 590 mm depth, about 910 mm height (D-shape chamber with door)
Material
stainless steel
Vacuum
Deposition chamber
Base pressure
< 1 * 10-7 mbar
Pump down time
5 hours to < 2 * 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Manipulator features
Deposition chamber
Sample size
diameter max. 6″ substrate
Motion axes
2 motorized axes (manipulator tilt rotation and sample clamping stage)
Motor driven (rotating) sample shutter with wedge shutter feature
Temperatures
About 15°C to 25°C (sample cooling without temperature control)
Sample preparation features
Deposition chamber
Plasma treatment
Up to 5E-4 mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion source to sample distance
Wide range variation of ion energy and ion beam current