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P459 – 2″ UHV sputter deposition system LMU

Application

UHV sputter deposition cluster tool for thin film and multilayer deposition at 2″ substrates

Year of delivery

2017

Installation site

LMU, Munich, Germany

Design Features

  • UHV multichamber magnetron sputter deposition system with combination of confocal and face to face sputtering.
  • In two sputter chambers up to eleven magnetrons can be installed.
    • Deposition uniformity better than 5% in both chambers.
    • One 2″ magnetron and two 3″ magnetrons can be used in face to face as well as confocal configuration in one chamber (called SP2).
    • Eight 2″ magnetrons can be used in confocal configuration in the second sputter chamber (called SP4).
    • All 2″ magnetrons and one 3″ with pneumatic in situ tilting.
    • One 3″ magnetron with pneumatic linear translation.
  • Fully motorized 3 axes sample manipulator with integrated motorized wedge shutter and maximal sample temperature well above 800°C.
  • Ion source for sample precleaning, mild etching, plasma treatment and oxidation in SP2 chamber.
  • Load lock chamber with storage and lamp heating.
  • Integrated bake out system.

Special Features

  • Four 2″ magnetrons in SP4 can be used in face to face configuration too.
  • All magnetrons (2″ as well as 3″) in SP4 can be used in face to face configuration too.
  • Load lock chamber is prepared for adding a third deposition chamber.
  • Handling incl. in situ exchange of sample masks in both sputter chambers.
  • Different sample sizes from 4″ wafer down to 10mm x 10mm samples can be handled (using different kind of sample adapters).

Outer Dimensions

Technical specifications and performance values

General

Sputtering chamber SP2

Size

About 800 mm diameter, about 700 mm height

Material

stainless steel

Sputtering chamber SP4

Size

About 800 mm diameter, about 700 mm height

Material

stainless steel

Load lock chamber

Size

About 200 mm diameter, about 400 mm height

Material

stainless steel

Vacuum

Sputtering chamber SP2

Base pressure

< 2 * 10-9 mbar

Pump down time

1.5 hours to < 10-7 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Bake out

< 150°C

Sputtering chamber SP4

Base pressure

< 2 * 10-9 mbar

Pump down time

1.5 hours to < 10-7 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Bake out

< 150°C

Load lock chamber

Base pressure

< 5 * 10-8 mbar

Pump down time

3.5 hours to < 10-7 mbar

Chamber pumping

Turbo pumping stage with dry foreline pump

Manipulator features

Sputtering chamber SP2

Sample size

diameter max. 2″ substrate

Motion axes

3 motorized axes (manipulator arm rotation, z tranlsation and (continous) sample stage rotation)

Motorized wedge shutter (part of the manipulator head) with a motion speed of min. about 0.4µm/s and max. about 5mm/s, incl. speed profile feature

Temperatures

Room temperature (not stabilized) up to 650°C at sample

Special features

Handling of sample masks

UHV thickness sensor head incl. shutter integrated

Sputtering chamber SP4

Sample size

diameter max. 2″ substrate

Motion axes

3 motorized axes (manipulator arm rotation, z tranlsation and (continous) sample stage rotation)

Motorized wedge shutter (part of the manipulator head) with a motion speed of min. about 0.4µm/s and max. about 5mm/s, incl. speed profile feature

Temperatures

Room temperature (not stabilized) up to 650°C at sample

Special features

Handling of sample masks

UHV thickness sensor head incl. shutter integrated

Load lock chamber
(Sample storage)

Storage size

6 sample holders

Sample size

diameter max. 2″ substrate

Motion axes

2 manual axes (rotation, z translation)
Rotation axis equipped with an air side indexer plate for easy and fast sample loading via access door or transfer rod

Sample preparation features

Sputtering chamber SP2

Oxydation /

Plasma treatment

max. 10-3 mbar partly ionised gas mixture (using a griddless ion gun)

Gas mixture variable from pure argon up to almost pure oxygen

Ion beam etching /

sample precleaning

Variable ion source to sample distance

Wide range variable ion energy and ion beam current

Load lock chamber

Thermal treatment

max. 300°C at sample (no temperature regulation)

Performance test results

Chamber pump down (Load lock + SP2)
Long time sample heating (SP2)
Chamber pump down (SP4)
Long time sample heating (SP4)